Critical Slowing Down of the Charge Carrier Dynamics at the Mott Metal-Insulator Transition
B. Hartmann, D. Zielke, J. Polzin, T. Sasaki, J. M\"uller

TL;DR
This paper investigates the critical slowing down of charge carrier dynamics near the Mott metal-insulator transition in a quasi-two-dimensional organic conductor, revealing divergence in resistance fluctuations and non-Gaussian behavior indicative of glassy electronic states.
Contribution
It provides experimental evidence of critical slowing down and non-Gaussian fluctuations at the Mott transition, suggesting glassy electronic behavior as a precursor.
Findings
Divergent resistance fluctuations at the critical endpoint
Spectral weight shifts to low frequencies indicating slow dynamics
Non-Gaussian fluctuations suggest correlated charge carrier behavior
Abstract
We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical endpoint we observe a divergent increase of the resistance fluctuations accompanied by a drastic shift of spectral weight to low frequencies, demonstrating the critical slowing down of the order parameter (doublon density) fluctuations. The slow dynamics is accompanied by non-Gaussian fluctuations, indicative of correlated charge carrier dynamics. A possible explanation is a glassy freezing of the electronic system as a precursor of the Mott MIT.
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