Design and cryogenic operation of a hybrid quantum-CMOS circuit

TL;DR

This paper presents the design and cryogenic operation of a hybrid quantum-CMOS circuit that integrates a FET-based ring oscillator with a nanoscale quantum device, demonstrating RF signal generation and rectification at low temperatures.

Contribution

It introduces a novel integrated circuit combining quantum effects with CMOS technology operating at cryogenic temperatures.

Findings

Successful co-integration of quantum and CMOS components.

Generation of RF signals at cryogenic temperatures.

Observation of RF rectification consistent with modeling.

Abstract

Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for larger dimensions, allowing to design integrated circuits. Using the same process, we have co-integrated a FET-based ring oscillator circuit operating at cryogenic temperature which generates a radio-frequency (RF) signal on the gate of a nanoscale device showing Coulomb oscillations. We observe rectification of the RF signal, in good agreement with modeling.