Time-evolution of the GaAs(0 0 1) pre-roughening process

TL;DR

This study uses atomic-scale scanning tunneling microscopy to observe the spontaneous formation of GaAs islands on the GaAs(0 0 1) surface, revealing pit formation as a dominant early process in surface evolution.

Contribution

It provides detailed real-time insights into the nucleation and evolution of GaAs surface morphology during pre-roughening, highlighting the role of pit formation in early stages.

Findings

Pit formation dominates initial island nucleation

Surface evolves from flat to island-covered within observed timeframe

Atomic-scale resolution reveals nucleation dynamics

Abstract

The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported.