Development of nanowire devices with quantum functionalities

TL;DR

This paper presents a fabrication process for silicon nanowire devices aimed at quantum functionalities, leveraging silicon's favorable nuclear and spin properties for next-generation quantum nano-devices.

Contribution

It introduces a novel fabrication method for doped silicon nanowires with potential applications in quantum device development.

Findings

Successful preparation of doped silicon nanowires

Electrical characterization setup established

Potential for quantum device integration

Abstract

Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new generation of devices that operate under the laws of quantum mechanics [1}. Semiconductor nanowires however, offer huge potential as the next building blocks of nano-devices due to their one-dimensional structure and properties [2]. We describe a fabrication process to prepare doped vapor-liquid-solid (VLS) grown silicon nanowire samples in a 2- and 4-terminal measurement setup for electrical characterisation.