Giant Anisotropic Magnetoresistance in a Quantum Anomalous Hall Insulator
A. Kandala, A. Richardella, S. Kempinger, C-X. Liu, N. Samarth

TL;DR
This paper investigates how the edge states in a quantum anomalous Hall insulator evolve with magnetization direction, revealing a giant, tunable anisotropic magnetoresistance that helps quantify edge contributions to transport.
Contribution
It demonstrates a field-tilt driven crossover from edge state to diffusive transport in a topological insulator, introducing a method to quantify edge state contributions using Landauer-Buttiker formalism.
Findings
Giant anisotropic magnetoresistance observed during the edge-to-diffusive transport transition.
Electrical tunability of magnetoresistance linked to magnetization orientation.
Method enables analysis of edge state transport away from perfect quantization.
Abstract
When a three-dimensional (3D) ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon - the quantum anomalous Hall effect - provides a conceptually new platform for studies of edge-state transport, distinct from the more extensively studied integer and fractional quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D edge states evolve as the magnetization is changed from out-of-plane to in-plane? We examine this question by studying the field-tilt driven crossover from predominantly edge state transport to diffusive transport in Cr-doped (Bi,Sb)2Te3 thin films, as the system transitions from a quantum…
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