Critical coupling layer thickness for positive or negative Goos-H\"anchen shifts near the excitation of backward surface polaritons in Otto-ATR systems
Mariana Zeller, Mauro Cuevas, Ricardo A. Depine

TL;DR
This paper theoretically investigates how the thickness of the coupling layer in Otto-ATR systems influences the sign and magnitude of the Goos-H"anchen shift when backward surface polaritons are excited, revealing conditions for positive or negative shifts.
Contribution
It introduces a phenomenological model linking the coupling layer thickness to the sign of the Goos-H"anchen shift in Otto-ATR systems with backward surface polaritons, supported by rigorous calculations.
Findings
Backward surface wave excitation can cause positive or negative Goos-H"anchen shifts.
The shift sign depends on whether the coupling layer thickness is above or below a critical value.
Large shifts and beam splitting occur near surface plasmon resonance.
Abstract
A theoretical analysis of the lateral displacement (Goos-H\"anchen shift) of spatially limited beams reflected from Attenuated Total Reflection (ATR) devices in the Otto configuration is presented when backward surface plasmon polaritons are excited at the interface between a positive refractive index slab and a semiinfinite metamaterial with negative refractive index. First, the stationary phase approximation and a phenomenological model based on the properties of the complex poles and zeroes of the reflection coefficient are used to demonstrate that: i) the excitation of backward surface waves can lead to both negative and positive (and not exclusively negative) Goos-H\"anchen shifts, and ii) the sign of the shift depends on whether the value of the coupling layer thickness is higher or lower than a critical value characteristic of the ATR structure. Second, these findings are…
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Taxonomy
TopicsPlasmonic and Surface Plasmon Research · Photonic and Optical Devices · Photonic Crystals and Applications
