Investigation of Magnetic Domain Structure in Bi0.7Dy0.3FeO3 thin films integrated with ZnO film

TL;DR

This study investigates the magnetic domain structure of Bi0.7Dy0.3FeO3 thin films integrated with ZnO, revealing coexistence of ferromagnetic and ferroelectric orderings with potential applications in MEMS and memory devices.

Contribution

It demonstrates the macroscopic magnetic and ferroelectric properties of BDFO/ZnO thin films and their coupling behavior at room temperature, using advanced microscopy and deposition techniques.

Findings

Coexistence of ferromagnetic and ferroelectric orderings at room temperature.

Strong coupling behavior observed between magnetic and electric properties.

Potential for MEMS and memory device applications.

Abstract

The magnetic domain structure of the multiferroic Bi1-xDyxFeO3 (BDFO) deposited on ZnO at the macroscopic level has been demonstrated in this paper. Magnetic properties are observed by saturated magnetic and ferroelectric hysteresis loops at room temperature. The coupling behaviour and magnetic transition are verified using Multimode Atomic Force Microscope by applying bias between sample and MFM tip. ZnO thin film of 300 nm was deposited by dielectric sputtering using a ZnO target on Si p-type conducting (.0001-0005 {\Omega} cm) substrate. BDFO thin films of 300 nm were deposited on Si/ZnO using PLD (Pulsed laser deposition) technique. It is observed that BDFO thin films integrated with ZnO film shows the coexistence of ferromagnetic and ferroelectric ordering with significant coupling at room temperature. Integration of BDFO films with ZnO piezoelectric thin film shows the potential in MEMS applications as well as in Memory devices and strong history dependent systems.