Revised diode equation for Ideal Graphene-Semiconductor Schottky Junction

TL;DR

This paper introduces a new theoretical model for graphene/semiconductor Schottky contacts, validated by experiments and quantum calculations, providing a better understanding of carrier transport in these junctions.

Contribution

It presents a simple, parameter-free carrier transport model derived from quantum statistical theory for graphene/semiconductor Schottky contacts, validated by quantum Landauer theory and first-principle calculations.

Findings

Model accurately explains experimental data

Validated by quantum Landauer theory

Applicable to various graphene/semiconductor contacts

Abstract

In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.