Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

TL;DR

This study investigates the electrical and optical properties of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy at different substrate temperatures, revealing how growth conditions affect carrier concentration and optical features.

Contribution

It provides a comparative analysis of electrical and optical characteristics of GaMnAs/GaAs films grown at varying substrate temperatures using MBE.

Findings

Higher carrier concentrations in low-temperature grown films.

Identification of multiple peaks in PL spectra related to excitons and acceptors.

Growth temperature influences optical and electrical properties.

Abstract

GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300 K. The carrier concentrations in the samples grown at a low substrate temperature are greater than those in the samples grown at a high substrate temperature. The PL spectra show a GaAs exciton peak, a peak involving a carbon acceptor, a substitutional Mn acceptor-related peak and an optical phonon-related peak.