Reply to "Comment on `Floquet Fractional Chern Insulators'"

TL;DR

This paper is a reply to a comment on the authors' previous work, reaffirming that the ground state of their effective Hamiltonian is an interacting fractional Chern insulator, thus defending their original findings.

Contribution

It provides a clarification and confirmation of the original results on Floquet fractional Chern insulators in response to critical comments.

Findings

Confirmed the ground state as an interacting fractional Chern insulator

Reaffirmed the validity of the original effective Hamiltonian approach

Addressed and clarified points raised in the comment

Abstract

We respond to the comments expressed by L. D'Alessio in arXiv:1412.3481 on our work "Floquet Fractional Chern Insulators" [Phys. Rev. Lett. 112, 156801 (2014)]. We confirm the central result that the ground state of the effective Hamiltonian is an interacting fractional Chern insulator.