High output efficiency (340 lm/W) in a one wavelength microcavity OLED with emitter layer positioned at an anti-node

TL;DR

This paper demonstrates a microcavity OLED with an emitter layer at an anti-node achieving record high efficiency of 340 lm/W, supported by a theoretical model explaining suppressed spontaneous emission.

Contribution

It introduces a novel OLED architecture with emitter placement at an anti-node, significantly improving efficiency over previous designs.

Findings

Achieved 340 lm/W efficiency in a microcavity OLED.

Efficiency increases with power and remains linear with current.

Theoretical model confirms spontaneous emission suppression at the anti-node.

Abstract

An OLED architecture is described in which a thin emitter layer is located at the anti-node of a resonant microcavity. In two realizations, the mode space is constrained by either multi-layer mirrors or by an emitter with transition dipole moments oriented normal to the vertical mode of the device. The multi-layer mirror device achieves 315 lm/W and the oriented emitter device achieves 340 lm/W. Output is observed to be linear in current and efficiency increases with power. This is in agreement with a proposed theoretical model for a microcavity device with emitter located at an anti-node where spontaneous emission is suppressed.