Strain induced mobility modulation in single-layer MoS$_{2}$

TL;DR

This study investigates how biaxial and uniaxial strain affect the electron mobility in single-layer MoS$_{2}$ at temperatures above 100 K, revealing strain-dependent mobility variations through simulations.

Contribution

It provides a detailed analysis of strain effects on MoS$_{2}$ mobility using ab-initio and Boltzmann transport methods, highlighting non-monotonic behavior under compression.

Findings

Mobility increases with tensile biaxial and uniaxial strain.

Compressive strain causes non-monotonic mobility changes.

Small compressive strain reduces mobility by about half.

Abstract

In this paper the effect of biaxial and uniaxial strain on the mobility of single-layer MoS$_{2}$ for temperatures T $>$ 100 K is investigated. Scattering from intrinsic phonon modes, remote phonon and charged impurities are considered along with static screening. Ab-initio simulations are utilized to investigate the strain induced effects on the electronic bandstructure and the linearized Boltzmann transport equation is used to evaluate the low-field mobility under various strain conditions. The results indicate that the mobility increases with tensile biaxial and tensile uniaxial strain along the armchair direction. Under compressive strain, however, the mobility exhibits a non-monotonic behavior when the strain magnitude is varied. In particular, with a relatively small compressive strain of 1% the mobility is reduced by about a factor of two compared to the unstrained condition, but with a larger compressive strain the mobility partly recovers such a degradation.