Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

TL;DR

This paper investigates charge and spin dynamics in a hybrid silicon double quantum dot system, demonstrating charge stability, quantum capacitance variation, and spin blockade, with potential for quantum computing applications.

Contribution

It introduces a novel hybrid double quantum dot in silicon coupling a donor to an artificial atom, with detailed charge and spin characterization.

Findings

Tunnel coupling of 2.7 GHz

Charge T2* of 200 ps

Relaxation time T1 of 100 ns

Abstract

Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.