A TEM study of Si-SiO2 interfaces in silicon nanodevices

TL;DR

This paper demonstrates the use of focused ion beam techniques to prepare silicon nanodevices for TEM analysis, revealing detailed insights into Si-SiO2 interfaces critical for device performance.

Contribution

It introduces a novel method for isolating and preparing nanoscale silicon device structures for TEM, enabling detailed interface analysis.

Findings

Successful TEM imaging of Si-SiO2 interfaces in various silicon nanodevices.

Identification of interfacial roughness and substrate crystallinity.

Correlation of fabrication processes with interface quality.

Abstract

The fabrication of micro- and nano-scale silicon electronic devices requires precision lithography and controlled processing to ensure that the electronic properties of the device are optimized. Importantly, the Si-SiO2 interface plays a crucial role in defining these properties. While transmission electron microscopy (TEM) can be used to observe the device architecture, substrate / contact crystallinity and interfacial roughness, the preparation and isolation of the device active area is problematic. In this work, we describe the use of focussed ion beam technologies to isolate and trench-cut targeted device structures for subsequent TEM analysis. Architectures studied include radio frequency, single electron transistors and electrically detected, magnetic resonance devices that have also undergone ion implantation, rapid thermal and forming gas anneals.