Valley properties of doped graphene in a magnetic field
Juan Sebastian Ardenghi, Pablo Bechthold, Estela Gonzalez, Paula Jasen, and Alfredo Juan

TL;DR
This paper investigates the electronic properties of doped graphene in a magnetic field, revealing valley-specific behaviors, impurity effects, and potential for polarized valley current manipulation through magnetic tuning.
Contribution
It provides a detailed theoretical analysis of valley-dependent electronic and magnetic properties of doped graphene under magnetic fields, including impurity effects and scattering contributions.
Findings
Valley-specific density of states differences observed.
Band gap induced by asymmetric impurity concentration.
Magnetization shifts with impurity energy, enabling valley current control.
Abstract
The aim of this work is to describe the electronic properties of graphene in a constant magnetic field in the long wavelength approximation with random binary disorder, by solving the Soven equation self-consistently. Density of state contributions for different valleys in each sublattice sites are obtained for different values of magnetic field strength showing remarkable differences between K and K' valleys. A band gap is obtained by an asymmetric on-site impurity concentration and the graphene electrons acquire an anomalous magnetic moment, which is opposite in different valleys, which depend highly in the interplay between the impurity band, the band edges and the broadening of the Landau levels. In turn, magnetization as a function of B for different on-site random impurities is computed showing that by decreasing the on-site impurity energy values, maximum magnetization is shifted…
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