Chemical Potential Fluctuations in Topological Insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ Films Visualized by Photocurrent Spectroscopy
Christoph Kastl (1, 2), Paul Seifert (1, 2), Xiaoyue He (3),, Kehui Wu (3), Yongqing Li (3), Alexander Holleitner (1, 2) ((1) Walter, Schottky Institut, Physik-Department, Technische Universit\"at M\"unchen,, (2) Nanosystems Initiative Munich (NIM), (3) Institute of Physics

TL;DR
This study visualizes chemical potential fluctuations in topological insulator films using photocurrent spectroscopy, revealing nanoscale disorder and thermoelectric effects at the interface, advancing understanding of surface state properties.
Contribution
The paper introduces a method to visualize and quantify chemical potential fluctuations in topological insulator films at the nanoscale using photocurrent spectroscopy.
Findings
Reproducible submicron photocurrent patterns linked to potential fluctuations
Potential disorder magnitude in the meV range quantified
Dominant photo-thermoelectric current observed in nanoscale constrictions
Abstract
We investigate the photocurrent properties of the topological insulator (BiSb)Te on SrTiO-substrates. We find reproducible, submicron photocurrent patterns generated by long-range chemical potential fluctuations, occurring predominantly at the topological insulator/substrate interface. We fabricate nano-plowed constrictions which comprise single potential fluctuations. Hereby, we can quantify the magnitude of the disorder potential to be in the meV range. The results further suggest a dominating photo-thermoelectric current generated in the surface states in such nanoscale constrictions.
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