Antiferromagnetic phase of the gapless semiconductor V3Al

TL;DR

This paper reports the synthesis and characterization of the antiferromagnetic gapless semiconductor V3Al, demonstrating its potential for future spintronic applications through experimental and theoretical analyses.

Contribution

It presents the first successful synthesis and detailed investigation of the antiferromagnetic D03 phase of V3Al, combining experimental measurements with density functional theory calculations.

Findings

V3Al exhibits antiferromagnetic order confirmed by synchrotron measurements.

Density functional theory shows stability of type G antiferromagnetism involving two-thirds of V atoms.

Transport and magnetization data support the antiferromagnetic nature of V3Al.

Abstract

Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully synthesized via arc-melting and annealing. The antiferromagnetic properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely-oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-third of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing antiferromagnetic elements.