Measurement of brightness temperature of two-dimensional electron gas in channel of a high electron mobility transistor at ultralow dissipation power

TL;DR

This paper introduces a straightforward method for directly measuring the brightness temperature of two-dimensional electron gas in high electron mobility transistors, aiding the study of ballistic transport and heterostructure properties.

Contribution

A new simple measurement technique for brightness temperature of 2DEG in HEMTs, demonstrated on a pseudomorphic HEMT, facilitating exploration of ballistic transport and electron dynamics.

Findings

Optimal HEMT dc regime in unsaturated area

Method effective for studying ballistic transport

Potential to explore heterostructure properties

Abstract

A technically simple and physically clear method is suggested for the direct measurement of brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method was demonstrated with the pseudomorphic HEMT as a specimen. The optimal HEMT dc regime, from the point of view of the "back action" problem, was found to belong to the unsaturated area of the static characteristics possibly corresponding to the ballistic electron transport mode. The proposed method is believed to be a convenient tool to explore the ballistic transport, electron diffusion, 2DEG properties and other electrophysical processes in the heterostructures.