Current-induced magnetization reversal in pseudo spin valves in current-in-plane configuration

TL;DR

This paper demonstrates current-induced magnetization reversal in pseudo spin valves using Oersted fields and dipolar coupling, with potential applications in magnetic memory devices.

Contribution

It introduces a method for magnetization reversal in lateral nanowires through combined Oersted fields and dipolar interactions, highlighting the importance of layer thickness and geometry.

Findings

Reversal achieved in specific layer thicknesses and geometries

Both straight and L-shaped wires exhibit switching

Dipolar coupling stabilizes antiparallel state

Abstract

We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via the lateral stray fields of the two magnetic layers. Starting from the parallel state the Oersted field rotates the magnetization vectors of both magnetic layers in opposite directions so far off the wire axis that the dipolar coupling becomes strong enough to stabilize an antiparallel configuration. As simulations and experiments show this coupling is only achieved for a narrow range of layer thicknesses and for suitable wire geometries. The reversal process is demonstrated as well for straight wires as for wire segments of L-shaped wires with inhomogeneous magnetization in which domain walls are present before and after the switching process.