Nanosized Vertical Organic Spin-Valves

TL;DR

This paper presents a new fabrication process for nanosized vertical organic spin-valves, achieving small active areas with high magnetoresistance, though with significant device-to-device variation, likely due to tunneling effects through pinholes.

Contribution

The study introduces a flexible fabrication method for nanoscale organic spin-valves capable of high magnetoresistance, expanding possibilities for device miniaturization.

Findings

Achieved active device areas below 500x500 nm^2.

Observed magnetoresistance exceeding 100%.

Device variation attributed to tunneling through pinholes.

Abstract

A fabrication process for vertical organic spin-valve devices has been developed which offers the possibility to achieve active device areas of less than 500x500 nm^2 and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large-area spin-valves indicates that the magnetoresistance of both, large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.