Valley relaxation in graphene due to charged impurities

TL;DR

This paper calculates how charged impurities cause valley relaxation in graphene, revealing the dependence on impurity proximity, electronic density, and electron-electron interactions, which is crucial for valleytronic applications.

Contribution

It provides a detailed theoretical analysis of valley relaxation rates in graphene considering impurity proximity and electron-electron interactions, using a specific orbital model and the Boltzmann equation.

Findings

Valley relaxation rate is proportional to the density of states at Fermi energy.

Impurities close to the graphene plane are much more effective in inducing relaxation.

Electron-electron interactions significantly influence the dependence of relaxation rate on the effective Bohr radius.

Abstract

Monolayer graphene is an example of materials with multi-valley electronic structure. In such materials, the valley index is being considered as an information carrier. Consequently, relaxation mechanisms leading to loss of valley information are of interest. Here, we calculate the rate of valley relaxation induced by charged impurities in graphene. A special model of graphene is applied, where the $p_z$ orbitals are two-dimensional Gaussian functions, with a spatial extension characterised by an effective Bohr radius $a_\textrm{eB}$. We obtain the valley relaxation rate by solving the Boltzmann equation, for the case of noninteracting electrons, as well as for the case when the impurity potential is screened due to electron-electron interaction. For the latter case, we take into account local-field effects and evaluate the dielectric matrix in the random phase approximation. Our main findings: (i) The valley relaxation rate is proportional to the electronic density of states at the Fermi energy. (ii) Charged impurities located in the close vicinity of the graphene plane, at distance $d \lesssim 0.3\,\textrm{\AA}$, are much more efficient in inducing valley relaxation than those farther away, the effect of the latter being suppressed exponentially with increasing graphene-impurity distance $d$. (iii) Both in the absence and in the presence of electron-electron interaction, the valley relaxation rate shows pronounced dependence on the effective Bohr radius $a_\textrm{eB}$. The trends are different in the two cases: in the absence (presence) of screening, the valley relaxation rate decreases (increases) for increasing effective Bohr radius. This last result highlights that a quantitative calculation of the valley relaxation rate should incorporate electron-electron interactions as well as an accurate knowledge of the electronic wave functions on the atomic length scale.