Electronic structure and thermoelectric properties of n- and p-type SnSe from first principles calculations
K. Kutorasinski, B. Wiendlocha, S. Kaprzyk, J. Tobola

TL;DR
This study uses first-principles calculations to analyze the electronic structure and thermoelectric properties of n- and p-type SnSe, revealing anisotropic transport behavior and potential for high thermoelectric efficiency, especially in n-type SnSe.
Contribution
The paper provides a comprehensive first-principles analysis of SnSe's electronic and thermoelectric properties, including effects of temperature and phase transition, highlighting the superior thermoelectric potential of n-type SnSe.
Findings
SnSe exhibits strong anisotropy in electron transport properties.
p-type SnSe has non-parabolic, pudding-mold-like valence band dispersion.
n-type SnSe potentially outperforms p-type in thermoelectric efficiency.
Abstract
We present results of electronic band structure, Fermi surface and electron transport properties calculations in orthorhombic - and -type SnSe, applying Korringa-Kohn-Rostoker method and Boltzmann transport approach. The analysis accounted for temperature effect on crystallographic parameters in structure as well as the phase transition to structure at K. Remarkable modifications of conduction and valence bands were notified upon varying crystallographic parameters within the structure before , while the phase transition mostly leads to jump in the band gap value. The diagonal components of kinetic parameter tensors (velocity, effective mass) and resulting transport quantity tensors (electrical conductivity , thermopower and power factor PF) were computed in wide range of temperature (K) and, hole (type) and electron…
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