High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu$_{0.02}$Bi$_2$Se$_3$
Liang Wu, Wang-Kong Tse, M. Brahlek, C. M. Morris, R. Vald\'es, Aguilar, N. Koirala, S. Oh, N. P. Armitage

TL;DR
This study uses time-domain magneto-terahertz spectroscopy to analyze the surface states and electron-phonon interactions in Cu-doped and pure Bi₂Se₃ topological insulator films, revealing high mobility surface conduction and potential for quantized Faraday rotation.
Contribution
It provides the first detailed measurement of surface state properties and electron-phonon coupling in Cu-doped Bi₂Se₃ using high-resolution Faraday rotation spectroscopy.
Findings
Cu doping induces a true bulk insulator with a single conduction channel.
Surface states exhibit high mobility up to 4000 cm²/V·s.
Electron-phonon interactions cause cyclotron resonance broadening at high fields.
Abstract
We have utilized time-domain magneto-terahertz spectroscopy to investigate the low frequency optical response of topological insulator CuBiSe and BiSe films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the CuBiSe induces a true bulk insulator with only a \textit{single} type of conduction with total sheet carrier density cm and mobility as high as 4000 cmVs. This is consistent with conduction from two virtually identical topological surface states (TSSs) on top and bottom of the film with a chemical potential 145 meV above the Dirac point and in the bulk gap. The…
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