Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

TL;DR

This paper presents a highly sensitive, broadband MoS2 photodetector utilizing a ferroelectric layer to suppress dark current, enable zero-bias operation, and extend detection into the near-infrared spectrum.

Contribution

The study introduces a ferroelectric layer in MoS2 photodetectors, achieving high detectivity, responsivity, and tunable band gap for broadband detection at zero bias.

Findings

Achieved high detectivity of 2.2×10^12 Jones

Photoresponsivity of 2570 A/W at 635 nm

Extended detection wavelength into near-infrared (0.85-1.55 μm)

Abstract

Photodetectors based on two dimensional materials have attracted growing interest. However, the sensitivity is still unsatisfactory even under high gate voltage. Here we demonstrate a MoS2 photodetector with a poly(vinylidene fluoride-trifluoroethylene) ferroelectric layer in place of the oxide layer in a traditional field effect transistor. The dark current of the photodetector is strongly suppressed by ferroelectric polarization. A high detectivity 2.21012 Jones) and photoresponsitivity (2570 A W) detector has been achieved under ZERO gate bias at a wavelength of 635 nm. Most strikingly, the band gap of few-layer MoS2 can be tuned by the ultra-high electrostatic field from the ferroelectric polarization. With this characteristic, photoresponse wavelengths of the photodetector are extended into the near infrared (0.85-1.55m). A ferroelectrics optoelectronics hybrid structure is an effective way to achieve high performance 2D electronic optoelectronic devices.