Theoretical Study of Phosphorene Tunneling Field Effect Transistors

TL;DR

This theoretical study uses atomistic quantum transport simulations to analyze phosphorene-based TFETs, revealing their potential for high performance and anisotropic behavior, with design considerations for scaling and leakage suppression.

Contribution

It provides a comprehensive theoretical analysis of phosphorene TFETs, highlighting their superior on-current and anisotropic properties compared to other 2D materials.

Findings

Phosphorene TFETs show subthreshold slope below 60 mV/dec.

Orientation affects on-current significantly due to anisotropic band structure.

Gate underlap is necessary for scaling down to suppress leakage.

Abstract

In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope (SS) below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe2 TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe2 TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.