Ambipolar Solution-processed Hybrid Perovskite Phototransistors

TL;DR

This paper demonstrates high-performance ambipolar hybrid perovskite phototransistors with fast response times and high photoresponsivity, highlighting their potential for advanced photoelectronic devices.

Contribution

It provides the first direct evidence of ambipolar transport in solution-processed hybrid perovskite phototransistors with record-breaking responsivity and ultrafast response.

Findings

Field-effect mobilities up to 1.24 and 1.01 cm2 V-1 s-1 for mixed halide perovskites.

Photoresponsivity of 320 A W-1, among the highest for phototransistors.

Ultrafast photoresponse speed of less than 10 microseconds.

Abstract

Organolead halide perovskites have attracted substantial attention due to their excellent physical properties, which enable them to serve as the active material in emerging hybrid solid-state solar cells. Here we investigate the phototransistors based on hybrid perovskite films, and provide direct evidence for their superior carrier transport property with ambipolar characteristics. The field-effect mobilities for triiodide perovskites at room temperature are measured as 0.18 (0.17) cm2 V-1 s-1 for holes (electrons), which increase to 1.24 (1.01) cm2 V-1 s-1 for mixed halide perovskites. The photoresponsivity of our hybrid perovskite devices reaches 320 A W-1, which is among the largest values reported for phototransistors. Importantly, the phototransistors exhibit an ultrafast photoresponse speed of less than 10 {\mu}s. The solution-based process and excellent device performance strongly underscore hybrid perovskites as promising material candidates for photoelectronic applications.