Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi
Satya K. Kushwaha, Jason W. Krizan, Benjamin E. Feldman, Andras, Gyenis, Mallika T. Randeria, Jun Xiong, Su-Yang Xu, Nasser Alidoust, Ilya, Belopolski, Tian Liang, M. Zahid Hasan, N. P. Ong, A. Yazdani, R. J. Cava

TL;DR
This study reports the growth of high-quality Na3Bi crystals and their electronic characterization, confirming 3D Dirac semimetal behavior and topological surface states through STM, ARPES, and transport measurements.
Contribution
It presents a method for growing high-quality Na3Bi crystals and provides comprehensive electronic characterization confirming 3D Dirac semimetal properties.
Findings
Observation of Landau levels and linear dispersion relations
Detection of topological surface states
First-time measurement of linear magnetoresistance and SdH oscillations
Abstract
High quality hexagon plate-like Na3Bi crystals with large (001) plane surfaces were grown from a molten Na flux. The freshly cleaved crystals were analyzed by low temperature scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), allowing for the characterization of the three-dimensional (3D) Dirac semimetal (TDS) behavior and the observation of the topological surface states. Landau levels (LL) were observed, and the energy-momentum relations exhibited a linear dispersion relationship, characteristic of the 3D TDS nature of Na3Bi. In transport measurements on Na3Bi crystals the linear magnetoresistance and Shubnikov-de Haas (SdH) quantum oscillations are observed for the first time.
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