Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses
Zihao Yang, Thomas F. Kent, Jing Yang, Hyungyu Jin, Joseph P. Heremans, and Roberto C. Myers

TL;DR
This study demonstrates that Gd doping in GaN 2DEGs induces room-temperature ferromagnetism with anisotropic magnetization, revealing new magnetic properties in semiconductor heterostructures without coupling to conduction electrons.
Contribution
It reports the first observation of anisotropic ferromagnetism in Gd-doped GaN 2DEGs with high Curie temperature and analyzes the magnetic behavior and transport properties in these heterostructures.
Findings
Ferromagnetism observed above room temperature in Gd-doped GaN 2DEGs.
Magnetization is anisotropic, favoring out-of-plane orientation.
No coupling between ferromagnetism and conduction electrons evidenced by Hall measurements.
Abstract
Here we report on the effect of rare earth Gd-doping on the magnetic properties and magnetotransport of GaN two-dimensional electron gasses (2DEGs). Samples are grown by plasma-assisted molecular beam epitaxy and consist of AlN/GaN heterostructures where Gd is delta-doped within a polarization-induced 2DEG. Ferromagnetism is observed in these Gd-doped 2DEGs with a Curie temperature above room temperature and an anisotropic spontaneous magnetization preferring an out-of-plane (c-axis) orientation. At magnetic fields up to 50 kOe, the magnetization remains smaller for in-plane configuration than for out-of-plane, which is indicative of exchange coupled spins locked along the polar c-axis. The sample with the lowest Gd concentration (2.3 cm) exhibits a saturation magnetization of 41.1 at 5 K revealing that the Gd ion spins (7 ) alone do…
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