Combined AES/Factor Analysis and RBS Investigation of a Thermally Treated Pt/Ti Metallisation on SiO2

TL;DR

This study combines AES/Factor Analysis and RBS techniques to analyze thermally treated Pt/Ti metallization on SiO2, revealing diffusion and oxidation processes affecting electrode stability in ferroelectric devices.

Contribution

It introduces a combined analytical approach using AES/Factor Analysis and RBS to precisely characterize diffusion and oxidation in Pt/Ti electrodes.

Findings

Diffusion of Ti and oxidation of Ti layers identified

Quantitative depth profiles of elements obtained

Enhanced understanding of electrode modifications during thermal treatment

Abstract

Pt/Ti metallisation bilayers are used as bottom electrodes for ferroelectric thin films. During deposition of the ferroelectric films, these electrodes are exposed to elevated temperatures causing modifications of the Pt/Ti bottom electrode. Diffusion and oxidation of the Ti adhesion layer have been studied by the application of factor analysis to AES depth profile data and by RBS. Factor analysis was employed to extract the chemical information from the measured AES spectra and to derive semiquantitative depth profiles of the identified material compounds. RBS was used to obtain the quantitative depth distribution of the elements. By the combination of both methods, diffusion and oxidation processes were observed and could be precisely describe.