High fidelity resonant gating of a silicon based quantum dot hybrid qubit
Dohun Kim, D. R. Ward, C. B. Simmons, D. E. Savage, M. G. Lagally,, Mark Friesen, S. N. Coppersmith, Mark A. Eriksson

TL;DR
This paper demonstrates high-fidelity, microwave-driven resonant gating of a silicon-based quantum dot hybrid qubit, achieving fast, coherent control with fidelities exceeding 93%, and discusses pathways to surpass 99% fidelity for quantum error correction.
Contribution
First implementation of microwave-driven gate operations on a silicon quantum dot hybrid qubit, significantly reducing charge noise sensitivity and improving gate fidelity.
Findings
Pi rotation time less than 5 ns with >93% fidelity.
Coherence time over 150 ns with dynamic decoupling.
Pathway to >99% gate fidelity for quantum error correction.
Abstract
Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its weak spin-orbit coupling and hyperfine interaction, and several architectures based on gate defined quantum dots have been proposed and demonstrated experimentally. Recently, a quantum dot hybrid qubit formed by three electrons in double quantum dot was proposed, and non-adiabatic pulsed-gate operation was implemented experimentally, demonstrating simple and fast electrical manipulations of spin states with a promising ratio of coherence time to manipulation time. However, the overall gate fidelity of the pulse-gated hybrid qubit is limited by relatively fast dephasing due to charge noise during one of the two required gate operations. Here we perform…
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