Strength of the dominant scatterer in graphene on silicon oxide

TL;DR

This paper investigates the primary source of scattering in graphene on silicon oxide, finding that charged impurities are the dominant scatterers affecting device variability.

Contribution

It quantifies the scattering strength of the dominant scatterer, providing evidence that charged impurities are more influential than resonant impurities in graphene on silicon oxide.

Findings

Charged impurities are the main scatterers affecting graphene mobility.

The scattering strength aligns more with charged impurities than resonant impurities.

Variability in graphene transistors is largely due to charged impurity scattering.

Abstract

A large variability of carrier mobility of graphene-based field effect transistors hampers graphene science and technology. We determine the scattering strength of the dominant scatterer responsible for the variability of graphene-based transistors on silicon oxide. The strength of the scatterer is found to be more consistent with charged impurities than with resonant impurities.