Metal Oxide Resistive Memory using Graphene Edge Electrode

TL;DR

This paper introduces a novel 3D resistive memory architecture utilizing graphene edge electrodes, achieving low power consumption and high storage potential, advancing the development of energy-efficient, high-bandwidth memory for big data applications.

Contribution

It presents a new 3D resistive memory design using atomically thin graphene edges, demonstrating superior energy efficiency and storage potential over metal-based devices.

Findings

Achieved low power and energy consumption in graphene-based resistive memory.

Demonstrated higher storage potential compared to metal-based devices.

Validated the architecture through circuit analysis with experimental device data.

Abstract

The emerging paradigm of abundant-data computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technology, however, cannot scale to satisfy such big data applications with the required throughput and energy efficiency. The next technology frontier will be monolithically integrated chips with three dimensionally interleaved memory and logic for unprecedented data bandwidth with reduced energy consumption. In this work, we exploit the atomically thin nature of the graphene edge to assemble a resistive memory stacked in a vertical three dimensional structure. We report some of the lowest power and energy consumption among the emerging non-volatile memories due to an extremely thin electrode with unique properties, low programming voltages, and low current. Circuit analysis of the architecture using experimentally measured device properties show higher storage potential for graphene devices compared that of metal based devices.