The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC

TL;DR

This paper investigates how bilayer domains in epitaxial graphene on SiC influence electronic transport properties, revealing that bilayer content causes variability in carrier concentration and mobility across devices.

Contribution

It provides the first detailed analysis of the impact of bilayer domains on the electronic transport properties of epitaxial graphene on SiC.

Findings

Monolayer graphene exhibits consistent carrier concentration and mobility.

Presence of bilayer domains introduces variability in electronic properties.

Bilayer content correlates with changes in transport behavior.

Abstract

Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content.