Interplay of electronic structure and unusual development in crystal structure of YbAuIn and Yb$_{3}$AuGe$_{2}$In$_{3}$
Zs. Rak

TL;DR
This study uses first-principles DFT calculations to explore how electronic valency states of Yb influence the unusual crystal structure parameters of YbAuIn and Yb₃AuGe₂In₃, revealing a link between valency and lattice expansion.
Contribution
It demonstrates the relationship between Yb valency states and structural parameters, providing insight into the electronic-structural interplay in these compounds.
Findings
YbAuIn is an intermediate valent system with Yb 4f state at Fermi level.
Yb₃AuGe₂In₃ is closer to integer valency with fully occupied Yb 4f states.
Expansion of the c-parameter in Yb₃AuGe₂In₃ is due to larger divalent Yb size.
Abstract
First-principles calculations within the DFT are employed to investigate the relationship between the electronic structure and the unexpected features of the hexagonal cell parameters of YbAuIn and YbAuGeIn. Calculations indicate that YbAuIn is an intermediate valent system with one Yb 4\textit{f} state pinned to the Fermi level, while YbAuGeIn is closer to integer valency with all Yb 4\textit{f} states occupied. Structural relaxations performed on LaAuIn and LuAuIn analogs reveal that expansion of the \textit{c}-parameter in YbAuGeIn is attributable to larger size of the divalent Yb compared with intermediate valent Yb.
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