Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance

TL;DR

This study investigates how Ar+ ion bombardment affects the structural, compositional, and electrical properties of GexSe1-x chalcogenide glasses, aiming to optimize non-volatile memory array fabrication.

Contribution

It introduces a fabrication scheme using ion bombardment through a mask and analyzes its effects on film structure and device performance, advancing memory array technology.

Findings

Ion bombardment causes structural reorganization in GexSe1-x films.

Surface roughness improves with increased Ge content after ion treatment.

Greater ion interaction with Ge-rich films leads to notable compositional changes.

Abstract

The conductive bridge non-volatile memory technology is an emerging way to replace traditional charge based memory devices for future neural networks and configurable logic applications. An array of the memory devices that fulfills logic operations must be developed for implementing such architectures. A scheme to fabricate these arrays, using ion bombardment through a mask, has been suggested and advanced by us. Performance of the memory devices is studied, based on the formation of vias and damage accumulation due to the interactions of Ar+ ions with GexSe1-x (x=0.2, 0.3 and 0.4) chalcogenide glasses as a function of the ion energy and dose dependence. Blanket films and devices were created to study the structural changes, surface roughness, and device performance. Raman Spectroscopy, Atomic Force Microscopy (AFM), Energy Dispersive X-Ray Spectroscopy (EDS) and electrical measurements expound the Ar+ ions behavior on thin films of GexSe1-x system. Raman studies show that there is a decrease in area ratio between edge-shared to corner-shared structural units, revealing occurrence of structural reorganization within the system as a result of ion/film interaction. AFM results demonstrate a tendency in surface roughness improvement with increased Ge concentration, after ion bombardment. EDS results reveal a compositional change in the vias, with a clear tendency of greater interaction between ions and the Ge atoms, as evidenced by greater compositional changes in the Ge rich films.