Study of the Electron Mobility in InAs/GaSb Type II Superlattices at High Temperatures

TL;DR

This study investigates how temperature affects electron mobility in InAs/GaSb type-II superlattices by modeling band structures and scattering mechanisms, showing good agreement with experimental data.

Contribution

It provides a detailed numerical analysis of electron mobility considering various scattering mechanisms in InAs/GaSb superlattices at high temperatures.

Findings

Electron mobility depends on structural and scattering parameters.

Calculated mobility aligns well with experimental results.

Temperature significantly influences electron mobility in these superlattices.

Abstract

In this paper, we present a study of the effects of temperature on the electron mobility in InAs/GaSb type-II superlattices (SLs) in which the band structures and wave functions are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. In the model the dominant scattering mechanisms such as alloy scattering, acoustic phonon scattering and optical phonon scattering are taken into account. The obtained electron mobility of the type II SLs is depended on the structural parameters and different scattering parameters. A comparison of our calculated results with published experimental data is shown to be in good agreement.