Plaquette chirality patterns for robust zero-gap states in $\alpha$-type organic conductor
Fr\'ed\'eric Pi\'echon, Yoshikazu Suzumura, Takao Morinari

TL;DR
This paper classifies sign configurations of transfer integrals in $ ext{(BEDT-TTF)}_2$I_3$ that lead to robust zero-gap states with Dirac electrons, revealing that certain sign patterns are more favorable for their existence.
Contribution
It introduces a classification scheme based on transfer integral signs that predicts the likelihood of zero-gap states in $ ext{(BEDT-TTF)}_2$I_3$, advancing understanding of Dirac electron emergence.
Findings
Class (-,-) most favorable for ZGS at 1/4 or 3/4 filling.
Class (+,+) does not support ZGS at these fillings.
Previous studies focused on class (-,+), which is less favorable.
Abstract
Dirac electrons with a zero-gap state (ZGS) in organic conductor -(BEDT-TTF)I result from a fine tuning of the seven nearest neighbors transfer integrals () between the four molecules of the unit cell. In this work we show that for given moduli , the possibility of having Dirac electron with a ZGS at (or ) filling strongly depends on the specific configurations of signs of the seven transfer integral. More precisely it is possible to classify the sign configurations into essentially four classes determined by and . Using extended numerics, we show that for both weak and large inhomogeneity in the moduli, the class is the most favorable to find Dirac electrons with ZGS at (or ) filling. For the class…
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