Persistent ion beam induced conductivity in zinc oxide nanowires

TL;DR

This paper demonstrates persistent conductivity in ZnO nanowires caused by ion beam irradiation, revealing potential for precise dopant implantation and advancing understanding of ion-induced persistent conduction phenomena.

Contribution

It introduces the concept of persistent ion beam induced conduction in ZnO nanowires, linking it to known persistent photo conduction and suggesting new applications.

Findings

Persistent ion beam induced conduction observed in ZnO nanowires.

Similar excitation efficiency and decay rates to persistent photo conduction.

Potential for single dopant implantation in nanostructures.

Abstract

We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitation efficiency, decay rates, and chemical sensitivity. Persistent ion beam induced conduction will potentially allow countable (i.e., single dopant) implantation in ZnO nanostructures and other materials showing persistent photo conduction.