Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

TL;DR

This paper demonstrates a graphene-silicon microring resonator that achieves high electro-optical modulation depth and extinction ratio, advancing the potential for integrated optoelectronic devices.

Contribution

It introduces a novel graphene-silicon microring design that significantly improves modulation depth and switching performance compared to previous devices.

Findings

High modulation depth of 12.5 dB at 8.8 V bias

On-off switching with 3.8 dB extinction ratio

Effective control of optical properties through Fermi level tuning

Abstract

Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.