Electrical and magnetic properties of La$_{0.5}$Rh$_4$Sb$_{12}$ filled skutterudite synthesized at high pressure

TL;DR

This study synthesized La$_{0.5}$Rh$_4$Sb$_{12}$ filled skutterudite using high-pressure methods, revealing semiconducting electrical behavior and temperature-independent diamagnetism, contributing to understanding of its electronic and magnetic properties.

Contribution

First synthesis of La$_{0.5}$Rh$_4$Sb$_{12}$ filled skutterudite via high-pressure technique, with detailed electrical and magnetic characterization.

Findings

Semiconducting behavior with an energy gap > 0.08 eV.

Temperature-independent diamagnetism from Larmor diamagnetism.

Electrical properties similar to La$_{0.5}$Rh$_4$As$_{12}$ semiconductor.

Abstract

A filled skutterudite, La$_{0.5}$Rh$_4$Sb$_{12}$, with a lattice constant of 9.284(2) {\AA} was synthesized using a high-pressure technique. The electrical resistivity showed semiconducting behavior and the energy gap was estimated to be more than 0.08 eV. Magnetic susceptibility measurements indicated temperature-independent diamagnetism, which originates from Larmor diamagnetism. The electrical properties of this compound are more similar to those of the La$_{0.5}$Rh$_4$As$_{12}$ semiconductor with an energy gap of 0.03 eV than to those of the La$_{0.6}$Rh$_4$P$_{12}$ superconductor.