Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

TL;DR

This paper introduces a dual marker Raman spectroscopy method using strained GaN quantum wells with isotopic Nitrogen in an AlN matrix, enabling precise strain analysis in buried heterostructures for optoelectronic and power device applications.

Contribution

It presents a novel dual marker Raman technique combining strain and isotopic markers in GaN/AlN quantum wells for improved strain characterization.

Findings

Effective in studying vertical strain in buried layers

Enables precise probing of heterostructure properties

Applicable to future vertical optoelectronic devices

Abstract

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters, and for power electronics.