g-Factor Modification in a Bulk InGaAs Epilayer by an In-plane Electric Field

TL;DR

This study demonstrates how an in-plane electric field can modify the g-factor in an InGaAs epilayer, affecting spin measurements and the understanding of spin-orbit interactions in semiconductor materials.

Contribution

It provides the first detailed measurement of g-factor modification by an in-plane electric field in InGaAs, revealing its dependence on electric field strength and diffusive velocity.

Findings

g-factor increases with electric field from -0.4473 to -0.4419

g-factor depends on diffusive velocity in the material

Electric field significantly impacts spin precession measurements

Abstract

We report on the modification of the g-factor by an in-plane electric field in an In$_{0.031}$Ga$_{0.969}$As epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to independently determine the g-factor and the spin-orbit fields. The g-factor increases from $-0.4473\pm0.0001$ at 0 V/cm to $-0.4419\pm0.0001$ at 25 V/cm applied along the [1$\overline{1}$0] crystal axis. In addition, spatially-resolved spin measurements show a g-factor dependence on diffusive velocity. The change in g-factor with electric field can have a large effect on the determination of the internal spin-orbit and nuclear fields from Larmor precession frequency measurements.