Thermionic Emission and Negative dI/dV in Photoactive Graphene Heterostructures

TL;DR

This paper investigates hot-carrier transport in photoactive graphene heterostructures, revealing thermionic emission, negative differential resistance, and gate-controlled switching driven by electron-lattice interactions.

Contribution

It introduces the role of hot-carrier dynamics and electron-lattice cooling dependence in photoresponse effects, including NDR, in graphene heterostructures.

Findings

Negative differential resistance observed in hot-carrier regime

Gate-controlled current at zero bias voltage

Carrier temperature drops with increased bias

Abstract

Transport in photoactive graphene heterostructures, originating from the dynamics of photogenerated hot carriers, is governed by the processes of thermionic emission, electron-lattice thermal imbalance and cooling. These processes give rise to interesting photoresponse effects, in particular negative differential resistance (NDR) arising in the hot-carrier regime. The NDR effect stems from a strong dependence of electron-lattice cooling on the carrier density, which results in the carrier temperature dropping precipitously upon increasing bias. The ON-OFF switching between the NDR regime and the conventional cold emission regime, as well as the gate-controlled closed-circuit current that is present at zero bias voltage, can serve as signatures of hot-carrier dominated transport.