Simultaneous Localization of Electrons in different $\Delta$-valleys in Ge/Si Quantum Dot Structures

TL;DR

This study demonstrates the experimental detection of electrons localized in different valleys within Ge/Si quantum dot structures using ESR, revealing valley-specific electron confinement influenced by light illumination.

Contribution

It provides the first experimental evidence of simultaneous electron localization in multiple valleys in Ge/Si quantum dots via ESR spectroscopy.

Findings

Electrons localized in $ abla^{100}$ and $ abla^{001}$ valleys were detected.

Light illumination induces electron localization in the $ abla^{001}$ valley.

Electron confinement is enhanced near QD apexes due to Coulomb attraction.

Abstract

In the present work the possibility of simultaneous localization of two electrons in $\Delta^{100}$ and $\Delta^{001}$ valleys in ordered structures with Ge/Si(001) quantum dots (QD) was verified experimentally by the electron spin resonance (ESR) method. The ESR spectra obtained for the ordered ten-layered QD structure in the dark show the signal corresponding to electron localization in Si at the Ge QD base edges in $\Delta^{100}$, $\Delta^{010}$ valleys ($g_{zz}$=1.9985, $g_{in-plane}$=1.999). Light illumination causes the appearance of a new ESR line ($g_{zz}$=1.999) attributed to electrons in the $\Delta^{001}$ valley localized at QD apexes. The observed effect is explained by enhancement of electron confinement near the QD apex by Coloumb attraction to the photogenerated hole trapped in a Ge QD.