Radiation Tolerance of 65nm CMOS Transistors
M. Krohn, B. Bentele, J. P. Cumalat, S. R. Wagner, D. C. Christian, G., Deptuch, F. Fahim, J. Hoff, A. Shenai

TL;DR
This study investigates the effects of ionizing radiation on 65nm CMOS transistors at -20C, revealing less damage compared to room temperature exposures after a 1 Grad dose.
Contribution
First detailed analysis of radiation effects on 65nm CMOS transistors at cryogenic temperature, showing temperature-dependent damage differences.
Findings
Less damage at -20C than at room temperature
Damage pattern similar to room temperature exposures
Damage observed after 1 Grad dose
Abstract
We report on the effects of ionizing radiation on 65nm CMOS transistors held at approximately -20C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.
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