Field induced nucleation in the presence of a metal electrode

TL;DR

This paper investigates how metal electrodes influence nucleation and polarizability in solid state memory devices, revealing significant increases in nucleation rates due to electrode effects using an image charge approach.

Contribution

It introduces a model analyzing metal electrode effects on nucleation and polarizability, providing new insights into resistive switching memory mechanisms.

Findings

Large increase in polarizability near metal electrodes

Enhanced nucleation rates due to electrode effects

Analysis applicable to static and oscillatory fields

Abstract

We consider the effect of metal electrodes on the polarizability and nucleation of metal phases responsible for the operations of the emerging solid state memory. Our analysis is based on the image charge approach. We find results for point dipoles in static and oscillatory fields as well as an erect cylindrical nucleus near metal surfaces in resistive switching memories. We predict a large increase in polarizability and nucleation rate due to the metal electrode effects.