Lead Iodide Perovskite Light-Emitting Field-Effect Transistor

TL;DR

This paper demonstrates a lead iodide perovskite light-emitting field-effect transistor that reveals intrinsic charge transport properties at low temperatures, enabling new optoelectronic device concepts like gated LEDs and lasers.

Contribution

It introduces the first CH3NH3PbI3 light-emitting FET, showing temperature-dependent mobility and electroluminescence, advancing understanding of perovskite optoelectronic devices.

Findings

Carrier mobility increases nearly 100-fold below 200 K.

Electroluminescence observed under ambipolar injection.

Spectra show phase transition from tetragonal to orthorhombic.

Abstract

Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors (FETs). Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This first demonstration of CH3NH3PbI3 light-emitting FETs provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light emitting diodes and lasers operating at room temperature.