A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP

TL;DR

This study investigates the magnetic, structural, and transport properties of InMnP epilayers doped with Mn, revealing their insulating behavior, spin polarization, and microstructural changes due to Mn implantation and laser annealing.

Contribution

It provides a comprehensive analysis of how Mn doping affects the magnetic and electrical properties of InMnP, highlighting the absence of insulator-metal transition up to 5% Mn doping.

Findings

All samples exhibit hysteresis and strong spin polarization.

InMnP remains insulating up to 5% Mn doping.

Mn impurity band stays detached from the valence band.

Abstract

The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at./%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at./% Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.