Circuit models and SPICE macro-models for quantum Hall effect devices
Massimo Ortolano, Luca Callegaro

TL;DR
This paper reviews existing circuit models for quantum Hall effect devices, introduces a new SPICE-compatible macro-model, and validates it through simulations aligned with analytical and experimental data, aiding quantum electrical metrology.
Contribution
It provides a systematic comparison of QHE circuit models and introduces a novel SPICE macro-model optimized for simulation accuracy and practical application.
Findings
The new macro-model accurately simulates QHE devices in SPICE.
Simulations match analytical and experimental results.
The model improves the evaluation of parasitic effects in quantum resistance standards.
Abstract
Quantum Hall effect (QHE) devices are a pillar of modern quantum electrical metrology. Electrical networks including one or more QHE elements can be used as quantum resistance and impedance standards. The analysis of these networks allows metrologists to evaluate the effect of the inevitable parasitic parameters on their performance as standards. This paper presents a systematic analysis of the various circuit models for QHE elements proposed in the literature, and the development of a new model. This last model is particularly suited to be employed with the analogue electronic circuit simulator SPICE. The SPICE macro-model and examples of SPICE simulations, validated by comparison with the corresponding analytical solution and/or experimental data, are provided.
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