Angle dependence of the orbital magnetoresistance in bismuth
Aurelie Collaudin, Benoit Fauque, Yuki Fuseya, Woun Kang, Kamran, Behnia

TL;DR
This study investigates how the orbital magnetoresistance in bismuth varies with angle and temperature, revealing anisotropic mobility, inelastic scattering effects, and a spontaneous valley polarization at low temperatures and high magnetic fields.
Contribution
It provides a detailed analysis of angle-dependent magnetoresistance in bismuth, quantifies mobility tensor components, and uncovers a spontaneous valley polarization phenomenon.
Findings
Quadratic temperature dependence of resistivity indicates carrier-carrier scattering dominance.
Angular oscillations match semi-classic transport theory, allowing mobility tensor extraction.
Low-temperature, high-field state shows loss of threefold symmetry and valley polarization.
Abstract
We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semi-classic transport theory for a multi-valley system with anisotropic mobility and the agreement allows us to quantify the components of the mobility tensor for both electrons and holes. A quadratic temperature dependence is resolved. As Hartman argued long ago, this indicates that inelastic resistivity in bismuth is dominated by carrier-carrier scattering. At low temperature and high magnetic field, the threefold symmetry of the lattice is suddenly lost. Specifically, a rotation of magnetic field around the trigonal axis modifies the amplitude of the magneto-resistance below a…
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